Flash memory cell with tunnel oxide layer protected from thermal

Details Flash memory cell with tunnel oxide layer protected from thermal Flash memory cell with tunnel oxide layer protected from thermal

1997-01-24

1998-04-28

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257318, H01L 2976

Patent

active

057448345

ABSTRACT:
A flash memory EEPROM transistor is formed on a surface of a semiconductor substrate. In portions of the substrate, at the surface thereof, a doped source region and a doped drain region are formed with a channel region therebetween. A tunnel silicon oxide dielectric layer is formed over the semiconductor substrate aside from the source region. Above the source region is formed a gate oxide layer which is thicker than the tunnel oxide layer. Above a portion of the tunnel oxide dielectric layer, over the channel region and above a portion of the gate oxide layer is formed a stacked-gate structure for the transistor comprising a floating gate layer, an interelectrode dielectric layer, and a control gate layer. The source region is located on one side of the stacked gate structure with one edge of the source region overlapping the gate structure. The drain region which is located on the other side of the stacked gate structure with one edge thereof overlapping the gate structure.

REFERENCES:
patent: 5017979 (1991-05-01), Fujii et al.
patent: 5284786 (1994-02-01), Sethi
patent: 5482879 (1996-01-01), Hong
patent: 5569946 (1996-10-01), Hong
patent: 5592002 (1997-01-01), Kanamori

Affiliated with

Also associated with

Rating

Flash memory cell with tunnel oxide layer protected from thermal does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory cell with tunnel oxide layer protected from thermal, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell with tunnel oxide layer protected from thermal will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1534797