Flash memory cell with self-aligned gates and fabrication proces

Details Flash memory cell with self-aligned gates and fabrication proces Flash memory cell with self-aligned gates and fabrication proces

1999-03-24

2000-07-18

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, H01L 29788

Patent

active

060911042

ABSTRACT:
Nonvolatile memory cell and process in which a control gate or a thick dielectric film is used as a mask in the formation of a floating gate and also as a step in the formation and alignment of a select gate. The floating gate is relatively thin and has a side wall with a rounded curvature which, in some embodiments, serves as a tunneling window for electrons migrating to the select gate during erase operations. In other embodiments, the gate oxide beneath the floating gate is relatively thin, and the electrons tunnel through the gate oxide to the source region in the substrate below.

REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5208174 (1993-05-01), Mori
patent: 5284784 (1994-02-01), Manley
patent: 5402371 (1995-03-01), Ono
patent: 5455792 (1995-10-01), Yi
patent: 5500384 (1996-03-01), Melzner
patent: 5557122 (1996-09-01), Shriv
patent: 5643812 (1997-07-01), Park
patent: 5726471 (1998-03-01), Keller et al.
patent: 5767005 (1998-06-01), Doan et al.
patent: 5780892 (1998-07-01), Chen
patent: 5838039 (1998-11-01), Sato et al.
patent: 5847427 (1998-12-01), Hagiwara
patent: 5847996 (1998-12-01), Guterman et al.
patent: 5917214 (1999-06-01), Sung

Affiliated with

Also associated with

Rating

Flash memory cell with self-aligned gates and fabrication proces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory cell with self-aligned gates and fabrication proces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell with self-aligned gates and fabrication proces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2039294