Flash memory cell with drain and source formed by diffusion...

Details Flash memory cell with drain and source formed by diffusion... Flash memory cell with drain and source formed by diffusion...

2005-09-13

2005-09-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S314000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000

Reexamination Certificate

active

06943401

ABSTRACT:
The present invention is a flash memory manufacturing process that facilitates efficient fabrication of a flash memory cell. In one embodiment, a silicide (e.g., CoSi) is utilized as a diffusion source. A layer of silicide is deposited over a source area and drain area. The dopant is implanted into the CoSi and diffuse out conformably along CoSi-Si interface at a relatively low temperature. The low temperature diffusion facilitates fabrication of a Flash core cell with a very shallow source/drain junction, and as a result a robust DIBL. The present invention also facilitates fabrication of memory cells with smaller spacers and shorter gate length.

REFERENCES:
patent: 5814854 (1998-09-01), Liu et al.
patent: 5960270 (1999-09-01), Misra et al.

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