Flash memory cell with buried floating gate and method for...

Details Flash memory cell with buried floating gate and method for... Flash memory cell with buried floating gate and method for...

2006-06-20

2006-06-20

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S314000

Reexamination Certificate

active

07064377

ABSTRACT:
A programmable read-only memory cell and method of operating the programmable read-only memory cell. In one embodiment, the programmable read-only memory cell comprises a floating gate arranged in a trench, an epitaxial channel layer formed on the floating gate, the channel layer connecting a source electrode to a drain electrode, and a selection gate arranged above the channel line.

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patent: 6252275 (2001-06-01), Aitken et al.
patent: 59-154071 (1984-09-01), None
patent: 59-154072 (1984-09-01), None
patent: 61-078169 (1986-04-01), None
PCT Search Report dated Feb. 10, 2003.
International Preliminary Examination Report dated Nov. 25, 2003.
German Examination Report dated Jun. 10, 2002.

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