Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-05
2006-09-05
Owens, Douglas W. (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C438S201000, C438S211000
Reexamination Certificate
active
07102190
ABSTRACT:
A structure for flash memory cells is disclosed, Isolation regions are formed in a semiconductor region separating cells and also separating programming bit line channel regions of a cell from reading bit line charmel regions of a cell. A conductive floating gates has a first portion in the programming bit line channel region of a cell and a second portion in the reading bit line channel region of the cell and a third connecting portion passing over an isolation region. A conductive control gate is separated from the floating gate by an intergate insulator layer and has a first portion entirely disposed over the first floating gate portion, where the first floating gate portion completely covers the space between a source region and a drain region, a second portion disposed over the second floating gate portion, where the second floating gate portion does not extend all the way from a source region to a drain region, the second control gate portion completing the covering of the space between a source region and a drain region and a third connecting portion disposed over the third floating gate portion. A programming bit line channel contact line and a reading bit line channel contact line are disposed over a covering insulator layer and connect to drain regions through the covering insulator layer.
REFERENCES:
patent: 5648669 (1997-07-01), Sethi et al.
patent: 6255169 (2001-07-01), Li et al.
Hsieh Chia-Ta
Lu Hsiang-Tai
Owens Douglas W.
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
LandOfFree
Flash memory cell with a unique split programming channel... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory cell with a unique split programming channel..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell with a unique split programming channel... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3600280