Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-04
2007-12-04
Ho, Tu-Tu (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S369000, C257S371000, C257S411000, C257SE29309
Reexamination Certificate
active
11430118
ABSTRACT:
A flash memory cell transistor and a method for fabricating the same compensates a work function difference of a pMOS and a nMOS with a triple gate insulating film by using electron density trapped in a pMOS gate insulating film. The flash memory cell transistor comprises a p-well region and a n-well region. The nMOS region comprises a nMOS channel ion-implantation region on the p-well region, a second gate oxide film on the nMOS channel ion-implantation region and a first n+ polysilicon gate electrode on the second gate oxide film. The pMOS region comprises a pMOS channel ion-implantation region on the n-well region, a first gate oxide film, an insulating film having an electron trap and the second gate oxide film which are sequentially formed on the pMOS channel ion-implantation region, and a second n+ polysilicon gate electrode on the second gate oxide film.
REFERENCES:
patent: 5650346 (1997-07-01), Pan
patent: 6201275 (2001-03-01), Kawasaki
patent: 6762453 (2004-07-01), Simacek et al.
patent: 2004/0180501 (2004-09-01), Liu
patent: 2000-49351 (2000-02-01), None
patent: 2002-373944 (2002-12-01), None
patent: 1020050070805 (2005-07-01), None
Tomoko Ogura et al., “Embedded Twin MONOS Flash Memories with 4ns and 15ns Fast Access Times”, Symposium on VLSI Circuits Digest of Technical Papers, 2003, pp. 207-210.
Ho Tu-Tu
Hynix / Semiconductor Inc.
Townsend & Townsend & Crew LLP
LandOfFree
Flash memory cell transistor and method for fabricating the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory cell transistor and method for fabricating the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell transistor and method for fabricating the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3845603