Flash memory cell having reduced floating gate to floating...

Details Flash memory cell having reduced floating gate to floating... Flash memory cell having reduced floating gate to floating...

2005-03-30

2008-03-25

Nhu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07348618

ABSTRACT:
According to an embodiment of the invention, a flash memory cell includes a first gate stack and a second gate stack having a film deposited across the gap between the first and second gate stacks so that the film creates a void between the first and second gate stacks. Dielectric materials may be used to reduce conductivity between the two stacks. A dielectric material that is resistant to conductivity has a low dielectric constant (k). The lowest-k dielectric material is air, which has a dielectric constant of approximately 1. By creating a void between the two gate stacks, the least conductive material (air) is left filling the space between the gate stacks, and the likelihood of parasitic coupling of two adjacent floating gates is substantially reduced.

REFERENCES:
patent: 5278103 (1994-01-01), Mallon et al.
patent: 5717635 (1998-02-01), Akatsu
patent: 5991204 (1999-11-01), Chang
patent: 6025260 (2000-02-01), Chen et al.
patent: 6043530 (2000-03-01), Chang
patent: 6101131 (2000-08-01), Chang
patent: 6125060 (2000-09-01), Chang
patent: 6165879 (2000-12-01), Lee et al.
patent: 6580120 (2003-06-01), Haspeslagh
patent: 6740549 (2004-05-01), Chen et al.
patent: 6744675 (2004-06-01), Zheng et al.
patent: 6888753 (2005-05-01), Kakoschke et al.
patent: 6995423 (2006-02-01), Zheng et al.
patent: 7084015 (2006-08-01), Nguyen

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