Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-08
2006-08-08
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S315000, C257S316000, C257S318000, C257S329000, C257SE21655, C257SE21410, C257SE21693, C257SE21625
Reexamination Certificate
active
07087950
ABSTRACT:
The present invention relates to a flash memory cell comprising a silicon substrate having an active region comprising a channel region and source-/drain-regions, the active region comprising a projecting portion, which projecting portion at least comprising said channel region; a tunneling dielectric layer formed on the surface of said active region; a floating gate formed on the surface of said tunneling dielectric layer for storing electric charges; an inter-gates coupling dielectric layer formed on the surface of said floating gate, and a control gate formed on the surface of said inter-gates coupling dielectric layer, wherein said floating gate is formed to have a groove-like shape for at least partly encompassing said projecting portion of said active region. This invention further relates to a flash memory device comprising such flash memory cells, as well as a manufacturing method thereof.
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Ichige, M., et al., “A Novel Self-Aligned Shallow Trench Isolation Cell for 90nm 4Gbit NAND Flash EEPROMs,” Symposium on VLSI Technology Digest of Technical Papers, 2003, pp. 89-90.
Lau Frank
Willer Josef
Anya Igwe U.
Baumeister B. William
Infineon - Technologies AG
Slater & Matsil L.L.P.
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