Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S316000, C257S321000, C257S324000, C257S326000, C438S201000, C438S257000, C438S258000
Reexamination Certificate
active
06911690
ABSTRACT:
A flash memory cell array comprises a substrate, a string of memory cell structures and source region/drain region. Each of memory cell structures includes a stack gate structure including a select gate dielectric layer, a select gate and a gate cap layer formed on the substrate; a spacer is set on the sidewall of the select gate; a control gate connected to the stack gate structure is set on the one side of the stack gate structure; a floating gate is set between the control gate and the substrate; an inter-gate dielectric layer is set between the control gate and the floating gate; and a tunneling dielectric layer is set between the floating gate and the substrate. The source region/drain region is set in the substrate near outer control gate and stack gate structure of the flash memory cell array.
REFERENCES:
patent: 5677216 (1997-10-01), Tseng
patent: 6373095 (2002-04-01), Bracchitta et al.
patent: 6720610 (2004-04-01), Iguchi et al.
patent: 6770920 (2004-08-01), Yoo et al.
patent: 2003/0127684 (2003-07-01), Yoo et al.
patent: 2004/0185615 (2004-09-01), Ding
Hsu Cheng-Yuan
Huang Min-San
Hung Chih-Wei
Wu Chi-Shan
Huynh Andy
Jiang Chyun IP office
Powership Semiconductor Corp.
LandOfFree
Flash memory cell, flash memory cell array and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash memory cell, flash memory cell array and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell, flash memory cell array and manufacturing... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3474667