Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S288000, C257S314000, C257S326000, C438S261000, C438S424000, C365S182000
Reexamination Certificate
active
06841824
ABSTRACT:
A process and product for making integrated circuits with dense logic and/or linear regions and dense memory regions is disclosed. On a common substrate, a dual hard mask process separately forms stacks of logic and/or linear transistors and EEPROM memory transistors. By using the process, the logic and/or linear and memory transistors are made with different sidewall insulating layers. The logic and/or linear transistors have relatively thin sidewall insulating layers sufficient to provide isolation from adjacent devices and conductors. The memory transistors have thicker sidewall insulating layer to prevent the charge stored in the memory device from adversely influencing the operation of the memory transistor.
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FitzGerald Esq. Thomas R.
Flynn Nathan J.
Infineon - Technologies AG
Roach, Esq. Laurence S.
Wilson Scott R.
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