Flash memory cell and method of fabricating the same

Details Flash memory cell and method of fabricating the same Flash memory cell and method of fabricating the same

1997-07-22

1999-02-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257320, 257324, 257900, H01L 2976, H01L 29788, H01L 29792

Patent

active

058747591

ABSTRACT:
A flash memory cell includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region having first and second channel region between the source and drain regions, a field oxide layer at a field region of the semiconductor substrate, a first gate oxide layer on the semiconductor substrate including the source and rain regions, a floating gate having first and second sides on the first gate oxide layer, a first insulating layer having first and second sides on the floating gate, a control gate having first and second sides on the first insulating layer, a second insulating layer having first and second sides on the control gate, a third insulating layer on the second sides of the second insulating layer including the control gate and the first insulating layer, a fourth insulating layer on the second side of the floating gate and the first sides of the second insulating layer including the control gate and the first insulating layer, a selection gate on the fifth insulating layer, an erasure gate on the fourth insulating layer including the third insulating layer, and a lightly-doped region in the semiconductor substrate, the lightly-doped region being partly overlapped with the floating gate.

REFERENCES:
patent: 4794565 (1988-12-01), Wu et al.
patent: 5382540 (1995-01-01), Sharma et al.
patent: 5397724 (1995-03-01), Nakajima et al.
patent: 5587332 (1996-12-01), Chang et al.
patent: 5712179 (1998-01-01), Yuan

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