Flash memory cell and manufacturing method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S686000, C438S666000, C438S299000, C438S257000, C438S303000, C438S305000

Reexamination Certificate

active

11160743

ABSTRACT:
A flash memory cell including a p-type substrate, an n-type deep well, a stacked gate structure, a source region, a drain region, a p-type pocket doped region, spacers, a p-type doped region and a contact plug is provided. The n-type deep well is set up within the p-type substrate and the stacked gate structure is set up over the p-type substrate. The stacked gate structure further includes a tunneling oxide layer, a floating gate, an inter-gate dielectric layer, a control gate and a cap layer sequentially formed over the p-type substrate. The source region and the drain region are set up in the p-type substrate on each side of the stacked gate structure. The p-type pocket doped region is set up within the n-type deep well region and extends from the drain region to an area underneath the stacked gate structure adjacent to the source region. The spacers are attached to the sidewalls of the stacked gate structure. The p-type doped region is set up within the drain region. The p-type doped region passes through the junction between the drain region and the p-type pocket doped region but is separated from the spacer by a distance. The contact plug is set up over the drain region and is electrically connected to the p-type doped region.

REFERENCES:
patent: 5899722 (1999-05-01), Huang
patent: 6136649 (2000-10-01), Hui et al.
patent: 6194784 (2001-02-01), Parat et al.
patent: 2003/0068859 (2003-04-01), Leung et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Flash memory cell and manufacturing method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory cell and manufacturing method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory cell and manufacturing method thereof will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3857251

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.