Flash memory cell and its operation

Details Flash memory cell and its operation Flash memory cell and its operation

1993-08-10

1994-09-20

Limanek, Robert

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 365185, 365218, H01L 2968, G11C 1604

Patent

active

053492200

ABSTRACT:
A method of operating a flash memory semiconductor device is provided. The semiconductor device formed on a substrate lightly is doped with a dopant. A source region and a drain region are formed in the substrate on the surface thereof. A dielectric layer is deposited upon the substrate. A floating gate electrode is formed on the dielectric layer proximate to at least the edges of the source region and the drain region. Additional dielectric material is deposited upon the surface of the floating gate electrode, and a gate electrode is deposited upon the surface of the additional dielectric material.

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patent: 4998220 (1991-03-01), Eitan et al.
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patent: 5168465 (1992-12-01), Harari
patent: 5247477 (1993-09-01), Norman
IEEE Electron-Devices Letter, pp. 117-119 (1989), "Degradations Due to Hole Trapping in Flash Memory Cells".
"A 128K Flash EEPROM using Double-Polysilicon Technology", by Seeq, Solid State CKt, pp. 676-683 (1987).

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