Flash memory cell and fabrication method

Details Flash memory cell and fabrication method Flash memory cell and fabrication method

2005-12-27

2005-12-27

Mulpuri, Savitri (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S259000

Reexamination Certificate

active

06979859

ABSTRACT:
Memory cells, formed as trench transistors, having a respective floating gate electrode and a control gate electrode at a trench wall above a channel region between doped regions for source and drain are provided with a gate electrode arranged in a further trench, via which gate electrode the channel region present in a semiconductor ridge between the trenches can additionally be driven.

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