Flash memory cell

Details Flash memory cell Flash memory cell

1997-12-29

1999-12-07

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257322, 257350, H01L 2978

Patent

active

059988304

ABSTRACT:
A flash memory cell of the present invention comprises a silicon substrate consisted of an insulating film and a silicon film in which a first and second channel regions are formed and a pair of gate electrodes formed on the first and second channel regions, respectively. Each channel region has a drain region and source region formed at both sides thereof.

REFERENCES:
patent: 3755721 (1973-08-01), Frohman-Bentchkowsky
patent: 4233616 (1980-11-01), Kyomasu et al.
patent: 4429326 (1984-01-01), Watanabe et al.
patent: 5440158 (1995-08-01), Sung-Mu
patent: 5465231 (1995-11-01), Ohsaki
patent: 5488243 (1996-01-01), Tsuruta et al.
patent: 5504706 (1996-04-01), D'Arrigo et al.
"Thin-film SOI devices: A Perspective", J.P. Colling, Microelectronic Engineering, Aug. 1998, pp. 127-147.

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