Flash memory array structure and method of forming

Details Flash memory array structure and method of forming Flash memory array structure and method of forming

2005-05-24

2005-05-24

Thompson, Craig A. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S506000

Reexamination Certificate

active

06897516

ABSTRACT:
A method of forming a flash memory array structure includes forming a first dielectric layer outwardly from a semiconductor substrate, removing a portion of the first dielectric layer and the substrate to create a trench isolation region, forming a second dielectric layer in the trench isolation region, removing a portion of the second dielectric layer to create an exposed substrate region proximate a bottom of the trench isolation region, doping the exposed substrate region with an n-type dopant, and forming a silicide region in the exposed substrate region.

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