Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-25
1999-10-26
Chaudhuri, Olik
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257371, 257316, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
059733748
ABSTRACT:
A common source flash memory array providing multiple well contact structures distributed within the array without the need for separate well tap regions connected to dedicated channel lines. The contact locations between Vss metal common source lines and source bus regions are used to provide additional contacts between Vss metal lines and p+ well taps, all of the source bus regions and the p+ well tap regions being encompassed within a double-well configuration. Depending on the specific embodiment of the present invention, the n+ diffused source bus regions and the nearby p+ well tap may: (a) be separately tied to the Vss metal common source line through separate contact metals (e.g., tungsten plugs); (b) be butted against each other and tied to a common Vss metal source line through separate contact metals; (c) be butted against each other and tied to a common Vss metal source line through a common contact metal (e.g., an enlarged plug) overlapping both the n+ diffused source bus regions and the p+ well tap; or (d) be tied to a common Vss metal source line through a common contact metal and a metal silicide layer.
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Cao Phat X.
Chaudhuri Olik
Integrated Silicon Solution Inc.
NexFlash Technologies, Inc.
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