Flash memory and methods of fabricating the same

Details Flash memory and methods of fabricating the same Flash memory and methods of fabricating the same

2007-08-07

2007-08-07

Crane, Sara (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S316000, C257S317000, C257S318000, C257S319000, C257S320000, C257S321000, C257S322000, C257S323000

Reexamination Certificate

active

10971585

ABSTRACT:
Flash memory and methods of fabricating the same are disclosed. An illustrated example flash memory includes a first source formed within a semiconductor substrate; an epitaxial layer formed on an upper surface of the semiconductor substrate; an opening formed within the epitaxial layer to expose the first source; a floating gate device formed inside the opening; and a select gate device formed on the epitaxial layer at a distance from the floating gate device.

REFERENCES:
patent: 5371704 (1994-12-01), Okazawa
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6207992 (2001-03-01), Mori
patent: 6635533 (2003-10-01), Chang et al.
patent: 1992-167372 (1992-06-01), None

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