Flash memory and method of fabricating the same

Details Flash memory and method of fabricating the same Flash memory and method of fabricating the same

2008-03-25

2008-03-25

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

Insulated gate formation

C257SE21179

Reexamination Certificate

active

11327321

ABSTRACT:
A method of fabricating a flash memory device produces a device that has a small cell area and yet a high coupling ratio. First, a basic structure is provided that includes a substrate, a field isolation film protruding from the substrate, and floating gates disposed on the substrate on opposite sides of the floating gate. A first etch process is performed to remove a portion of the field isolation film and thereby expose upper portions of the floating gates. Then, a second etch process is performed to knock off the edges of the floating gates. Thus, a large amount of space is secured between the floating gates for a dielectric film and a control gate.

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