Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-31
2011-05-31
Booth, Richard A. (Department: 2812)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE27086
Reexamination Certificate
active
07952133
ABSTRACT:
Provided are a flash memory and a method for manufacturing the same. The flash memory includes a semiconductor substrate having a device isolation region and an active region; a stacked gate on the semiconductor substrate; an insulation layer covering the semiconductor substrate and the stacked gate; a drain contact penetrating the insulation layer on one side of the stacked gate; and a source line penetrating the insulation layer on an opposite side of the stacked gate.
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Booth Richard A.
Dongbu Electronics Co. Ltd.
Fortney Andrew D.
Jimenez Anthony R.
The Law Offices of Andrew D. Fortney
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