Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-09-01
2000-05-30
Booth, Richard
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
438264, H01L 218247
Patent
active
060693835
ABSTRACT:
A memory device and a method for manufacturing the same is provided that reduces a resistance of the source region and reduces an effective cell size. The memory includes tunnel insulating films and floating gates formed stacked on a plurality of prescribed regions of a semiconductor substrate, a plurality of stacked gate insulating films, control gate lines and gate cap insulating films extend in a first direction with a zigzag pattern to cover the floating gates. Thus, the distance between adjacent control gate lines varies. Source regions are formed in the semiconductor substrate where a narrow space exists between the control gate lines stacked on the floating gates, and drain regions are formed in the semiconductor substrate where a wider space exists between the control gate lines stacked on the floating gates. Source contact regions are formed to expose the source regions, and a first conductive plate is coupled to the source regions. Bit line contact regions are formed to expose the drain regions. A second conductive line is formed in a direction crossing the control gate lines at a right angle coupled to the drain regions. The contact regions are formed in a zigzag pattern.
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Booth Richard
LG Semicon Co. Ltd.
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