Flash memory and method for fabricating the same

Details Flash memory and method for fabricating the same Flash memory and method for fabricating the same

1997-03-03

1998-11-24

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257321, H01L 29788

Patent

active

058411615

ABSTRACT:
A flash memory is disclosed including a second conductivity-type substrate having first conductivity-type first and second impurity regions spaced apart from each other by a predetermined distance; a second conductivity-type floating gate formed above part of the first impurity region; a first conductivity-type floating gate formed over the second conductivity-type floating gate; and an insulating layer and first conductivity-type control gate sequentially formed on the first conductivity-type floating gate.

REFERENCES:
patent: 5063423 (1991-11-01), Fujii et al.
patent: 5434813 (1995-07-01), Tamura et al.
patent: 5554552 (1996-09-01), Chi

Affiliated with

Also associated with

Rating

Flash memory and method for fabricating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash memory and method for fabricating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash memory and method for fabricating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705919