Flash memory and manufacturing method of the same

Details Flash memory and manufacturing method of the same Flash memory and manufacturing method of the same

2008-08-28

2011-12-06

Smoot, Stephen W (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S611000, C257SE29024

Reexamination Certificate

active

08072019

ABSTRACT:
A flash memory includes a shallow trench isolation and an active region formed at a substrate, a plurality of stacked gates formed on and/or over the active region, a deep implant region formed at a lower portion of the shallow trench isolation and the active region between the stacked gates and a shallow implant region formed at a surface of the active region between the stacked gates.

REFERENCES:
patent: 6159803 (2000-12-01), Hong et al.
patent: 7741179 (2010-06-01), Shin
patent: 2006/0138524 (2006-06-01), Kim

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