FLASH-EPROM with enhanced immunity from soft-programming of refe

Details FLASH-EPROM with enhanced immunity from soft-programming of refe FLASH-EPROM with enhanced immunity from soft-programming of refe

1991-10-30

1994-05-10

LaRoche, Eugene R.

Static information storage and retrieval

Floating gate

Particular biasing

365182, 365900, G11C 1134, G11C 1700

Patent

active

053114663

ABSTRACT:
The probability of soft-programming of the reference cells of a FLASH-EPROM memory may be excluded by having a decoupling transistor of a type of conductivity opposite to that of the cells functionally connected between the gate of each reference cell and the respective row line. Moreover the elimination of the electrical stresses to which the reference cells are subjected during the repeated programming cycles of the memory cells, increases the stability of the respective reference values of threshold and current level provided by the reference cells, thus increasing the reliability of the device.

REFERENCES:
patent: 4807188 (1989-02-01), Casagrande

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