Flash electrically erasable and programmable ROM

Details Flash electrically erasable and programmable ROM Flash electrically erasable and programmable ROM

1992-02-14

1994-05-03

LaRoche, Eugene R.

Static information storage and retrieval

Read/write circuit

Erase

365185, 36518911, 365900, G11C 1140

Patent

active

053094026

ABSTRACT:
A flash EEPROM with sector erasure, carries out the erasure by applying a negative voltage to a selected word line through an N-channel MOS transistor. P-channel MOS transistors are respectively inserted between row decoder level shifters and each of their respective word lines to which they are respectively connected. The turning-on and -off of the respective word lines and first level shifters is controlled by the turning-on and -off of the associated P-channel MOS transistor. An erase voltage is applied to one end of the source/drain path of the respective N-channel MOS transistor of the selected cord line, the other end to the respective word lines. The turning-on and -off of the N-channel MOS transistor is synchronized with the turning-on and -off of the P-channel MOS transistor connected to the same word line. The P-channel MOS transistor is formed on an N well biased to, for example, 5 V and the N-channel MOS transistor is formed on a P well biased to, for example, the erase voltage. The P well is formed on the surface of the N well.

REFERENCES:
patent: 5022000 (1991-06-01), Terasawa et al.
patent: 5077691 (1991-12-01), Haddad et al.
patent: 5084843 (1992-01-01), Mitsuishi et al.
Virgil Niles Kynett et al, "An In-System Reprogrammable 32K.times.8 CMOS Flash Memory", IEEE Journal of Solid-State Circuits, vol. 23, No. 5, Oct. 1988, pp. 1157-1163.
S. Aritome et a, "A Reliable Bi-Polarity Write/Erase Technology In Flash EEPROMs", IEDM Technical Digest, 1990, pp. 111-114.
N. Ajika et al, "A 5 Volt Only 16M Bit Flash EEPROM Cell With a Simple Stacked Gate Structure", IEDM Digest, 1990, pp. 115-118.

Affiliated with

Also associated with

Rating

Flash electrically erasable and programmable ROM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Flash electrically erasable and programmable ROM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash electrically erasable and programmable ROM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2120599