Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-09-06
2005-09-06
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000
Reexamination Certificate
active
06940122
ABSTRACT:
A high-density flash EEPROM (Electrically Erasable Programmable Read Only Memory) unit cell and a memory array architecture including the same are disclosed. The flash EEPROM unit cell comprises a substrate on which field oxide layers are formed for isolating unit cells, a floating gate dielectric layer formed between the adjacent field oxide layers, wherein the floating gate dielectric layer includes a first dielectric layer and a second dielectric layer which are connected in parallel between a source and a drain formed on the substrate, and the thickness of the first dielectric layer is thicker than the second dielectric layer, a floating gate formed on the floating gate dielectric layer, a control gate dielectric layer formed on the floating gate; and a control gate formed on the control gate dielectric layer.
REFERENCES:
patent: 5429960 (1995-07-01), Hong
patent: 5460991 (1995-10-01), Hong
patent: 5532181 (1996-07-01), Takebuchi et al.
patent: 5750428 (1998-05-01), Chang
patent: 5953254 (1999-09-01), Pourkeramati
patent: 6621130 (2003-09-01), Kurokawa et al.
patent: 6642105 (2003-11-01), Kim et al.
patent: 6759706 (2004-07-01), Kobayashi
patent: 6815283 (2004-11-01), Lee
Huynh Andy
Staas & Halsey , LLP
Terra Semiconductor, Inc.
LandOfFree
Flash EEPROM unit cell and memory array architecture... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Flash EEPROM unit cell and memory array architecture..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Flash EEPROM unit cell and memory array architecture... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3408635