Flash EEPROM system with erase sector select

Details Flash EEPROM system with erase sector select Flash EEPROM system with erase sector select

1992-10-20

1995-05-23

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Erase

365185, 365900, G11C 700

Patent

active

054187524

ABSTRACT:
A system of Flash EEprom memory chips with controlling circuits serves as non-volatile memory such as that provided by magnetic disk drives. Improvements include selective multiple sector erase, in which any combinations of Flash sectors may be erased together. Selective sectors among the selected combination may also be de-selected during the erase operation. Another improvement is the ability to remap and replace defective cells with substitute cells. The remapping is performed automatically as soon as a defective cell is detected. When the number of defects in a Flash sector becomes large, the whole sector is remapped. Yet another improvement is the use of a write cache to reduce the number of writes to the Flash EEprom memory, thereby minimizing the stress to the device from undergoing too many write/erase cycling.

REFERENCES:
patent: 4752871 (1988-06-01), Sparks et al.
patent: 4970692 (1990-11-01), Ali et al.
R. Wilson, "1-Mbit flash memories seek their role in system design", Computer Design, Mar. 1, 1989, pp. 30 and 32.

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