Flash EEPROM memory systems having multistate storage cells

Details Flash EEPROM memory systems having multistate storage cells Flash EEPROM memory systems having multistate storage cells

1989-07-17

1991-08-27

Gossage, Glenn

Static information storage and retrieval

Systems using particular element

Ternary

365185, 365218, G11C 1156

Patent

active

050439405

ABSTRACT:
A memory system made up of electrically programmable read only memory (EPROM) or flash electrically erasable and programmable read only memory (EEPROM) cells. An intelligent programming technique allows each memory cell to store more than the usual one bit of information. An intelligent erase algorithm prolongs the useful life of the memory cells. Use of these various features provides a memory having a very high storage density and a long life, making it particularly useful as a solid state memory in place of magnetic disk storage devices in computer systems.

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Bleiker et al., "A Four-State EEPROM Using Floating-Gate Memory Cells", IEEE Journal of Solid-State Circuits, Jul. 1987, p. 260.
Horiguchi et al., "An Experimental Large-Capacity Semiconductor File Memory Using 16-Levels/Cell Storage", IEEE Journal of Solid-State Circuits, Feb. 1988, p. 27.
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Harold, "Production E.P.R.O.M. Loading", New Electronics, vol. 15, No. 3, Feb. 1982, pp. 47-50.
Torelli et al., "An Improved Method for Programming a Word-Erasable EEPROM", Alta Frequenza, vol. 52, No. 5, Nov. 1983, pp. 487-494.

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