Flash EEPROM cell and method of making the same

Details Flash EEPROM cell and method of making the same Flash EEPROM cell and method of making the same

1997-07-16

1999-01-12

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, 257324, 257321, H01L 2976, H01L 29788, H01L 29792

Patent

active

058594531

ABSTRACT:
The flash EEPROM cell of split-gate type according to the present invention can prevent the degradation of the tunnel oxide film of the cell due to the band-to-band tunneling and the secondary hot carrier which are generated by a high electric field formed at the overlap region between the junction region and the gate electrode when programming and erasure operations are performed by a high voltage to the structure in which the tunneling region is separated from the channel with a thick insulation film.

REFERENCES:
patent: 5138410 (1992-08-01), Takebuchi
patent: 5138573 (1992-08-01), Jeuch
patent: 5267195 (1993-11-01), Kodama
patent: 5427970 (1995-06-01), Hsue et al.
patent: 5445984 (1995-08-01), Hong et al.
patent: 5449941 (1995-09-01), Yamazaki et al.
patent: 5477068 (1995-12-01), Ozawa
patent: 5557566 (1996-09-01), Ochii
patent: 5569945 (1996-10-01), Hong

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