Flash EEPROM cell and method of making the same

Details Flash EEPROM cell and method of making the same Flash EEPROM cell and method of making the same

1996-12-12

1999-03-02

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257314, 257315, 257320, H01L 2976, H01L 29788

Patent

active

058775250

ABSTRACT:
A flash EEPROM cell according to the present invention is manufactured in accordance with the following processes: forming a oxide film on a portion of the silicon substrate by means of the LOCOS process using the patterned nitride film as an oxidation preventing layer; dry-etching a portion of the oxide film using the patterned nitride film as the etching mask; forming a tunnel oxide film, forming floating gates of a symmetric structure at the etched face; removing the patterned nitride film; forming source and drain regions by means of the self-aligned ion implantation method using the residual oxide film remaining below the patterned nitride film and the floating gates; removing the residual oxide film; forming a select channel region at this portion by means of the ion implantation process for controlling a threshold voltage; and then forming an interpoly oxide film and a control gate by means of the common processes.

REFERENCES:
patent: 4583281 (1986-04-01), Ghezzo et al.
patent: 5448094 (1995-09-01), Hsu
IBM Technical Disclosure Bulletin, vol. 35 No. 4B, pp. 130-131, Sep. 1992.

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