Flash EEPROM cell and manufacturing methods thereof

Details Flash EEPROM cell and manufacturing methods thereof Flash EEPROM cell and manufacturing methods thereof

1996-03-27

1997-04-01

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257317, 257319, 257321, 257322, H01L 29788, H01L 2976

Patent

active

056169426

ABSTRACT:
This invention relates to a flash EEPROM(Electrically Erasable Programmable Read-Only Memory) cell, more particularly to the cell having an inverter structure with an n-channel part and a p-channel part which hold a floating gate in common, in which the floating gate is charged with hot electrons produced in the n-channel part in programming and the floating gate is neutralized or inverted with hot holes produced in the p-channel part in erasing.

REFERENCES:
patent: 4363109 (1982-12-01), Gardner, Jr.
patent: 5055897 (1991-10-01), Canepa et al.
patent: 5218571 (1993-06-01), Norris
patent: 5253196 (1993-10-01), Shimabukuro et al.
patent: 5300803 (1994-04-01), Lin
patent: 5465231 (1995-11-01), Ohsaki

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