Flash eeprom cell

Details Flash eeprom cell Flash eeprom cell

1997-10-22

1998-12-22

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257315, 257316, 257317, 257319, 438264, 438266, H01L 27115

Patent

active

058523120

ABSTRACT:
The flash EEPROM cell of split-gate type according to the present invention can prevent the degradation of the tunnel oxide film of the cell due to the band-to-band tunneling and the secondary hot carrier which are generated by a high electric field formed at the overlap region between the junction region and the gate electrode when programming and erasure operations are performed by a high voltage to the structure in which the tunneling region is separated from the channel with a thick insulation film.

REFERENCES:
patent: 5231041 (1993-07-01), Arima et al.
patent: 5445984 (1995-08-01), Hong et al.
patent: 5585656 (1996-12-01), Hsue et al.

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