Flash devices with shared word lines

Details Flash devices with shared word lines Flash devices with shared word lines

2005-12-21

2009-02-24

Ngo, Ngan (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S208000, C257S209000, C257S211000, C257S315000, C257S391000, C257SE27102

Reexamination Certificate

active

07495294

ABSTRACT:
Word lines of a NAND flash memory array are formed by concentric, rectangular shaped, closed loops that have a width of approximately half the minimum feature size of the patterning process used. The resulting circuits have word lines linked together so that peripheral circuits are shared. Separate erase blocks are established by shield plates.

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