Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2000-03-10
2003-05-13
Chaudhuri, Olik (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C438S767000, C438S279000
Reexamination Certificate
active
06563166
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates generally to semiconductor memory devices, and more specifically to a memory device and the process of manufacturing such a device.
2. Description of the Prior Art
An electrically erasable programmable read only memory (EEPROM) cell is a nonvolatile writable and erasable memory cell which requires very low operating currents. The unit cell of an EEPROM may be formed by connecting a memory transistor in series with a select transistor. Some EEPROM designs are integrated so that the features of the two transistors are merged. Flash EEPROMs describe a family of single-transistor cell EEPROMs. Cell sizes of Flash EEPROMs are about half that of two transistor EEPROMs.
Flash memory designs differ in their cell structure based on whether they require one or several transistors per cell. Single-transistor self-aligned stacked-gate cells are well known. However, the single-transistor cell suffers from the possibility of over-erasure and consequent current leakage. A split-gate cell provides the equivalent of a two-transistor architecture, but requires only a little more chip area than a single transistor cell. Through a diffusion process, the split-gate creates a phantom transistor that looks like a series transistor. This allows the cell to be isolated from others in a column.
FIG. 1
shows a cross sectional elevation view of a conventional flash memory device at
10
, the memory device including: a first memory cell
12
and a second memory cell
14
formed over a substrate
16
, each of the cells sharing a common source region
18
; and first and second drain regions
19
and
20
formed in the substrate
16
on opposite sides of the common source region
18
. The first and second memory cells
12
and
14
include a first select gate stack
22
and a second select gate stack
24
respectively, each of the select gate stacks
22
and
24
having: a tunnel oxide layer
26
formed over the substrate; a first conductive layer
28
formed over the tunnel oxide layer
26
and providing a select gate of the respective memory cell; and a first dielectric layer
30
formed over the first conductive layer
26
; a first spacer
32
formed adjacent an outer sidewall of the corresponding stack
22
; and a second spacer
33
formed adjacent an inner sidewall of the corresponding stack
22
.
Each memory cells
12
and
14
also include first and second floating gates
40
and
42
respectively. Each of the floating gates
40
and
42
including: a first portion formed over an outer portion of the common source region
18
; a second portion formed superjacent an area of the substrate disposed between the common source region
18
and the corresponding one of the select gate stacks
22
and
24
; and a third portion disposed over an inner portion of the corresponding one of the select gate stacks
22
and
24
. A dielectric layer
44
is formed over the first and second drain regions
19
and
20
, the first and second select gate stacks
22
and
24
, the first and second floating gates
40
and
42
, and the common source region
18
. The first and second memory cells
12
and
14
further include first and second control gates
48
and
50
respectively, each of the control gates being formed over portions of the dielectric layer
44
which overly a portion of the corresponding one of the floating gates
40
and
42
, and a portion of the corresponding one of the select gate stacks
22
and
24
.
There are several problems associated with the manufacturing and performance of the prior art flash memory device
10
. One disadvantage associated with the device
10
is that a relatively large area is required for fabricating each of the memory cells
12
and
14
on a semiconductor substrate, and therefore it is difficult to achieve very large scale integration of integrated circuits having such devices. Another disadvantage is that even though the memory cells
12
and
14
share a common source region
18
, the separate control gates
48
and
50
of the two memory cells
12
and
14
must be individually selected by a decoding means (not shown). Therefore, device performance suffers. A further problem associated with the prior art flash memory device
10
is that it is difficult to control the fabrication process or the device because of the overlapping of the outer portion of the floating gates
40
and
42
over the inner portions of the first and second select gate stacks
20
and
24
. Certain lithography steps required to form the device
10
are difficult to control to a degree of accuracy required to avoid shifting on the selective positions of the overlapping pairs of floating gates
40
and
42
as well as select gate stacks
22
and
24
. Such shifting of the selective positions of the overlapping floating gates and select gates can effect performance of the device
10
.
Fukumoto (U.S. Pat. No. 5,753,953, issued May 19, 1998) discloses a semiconductor storage device having a drain region and a source region formed in a silicon substrate, a select gate formed on the substrate between the source and drain regions, and a gate insulating film sandwiched between the select gate and substrate. On one side of the select gate, a floating-gate is formed out of a sidewall formed with an insulating film sandwiched. On the floating-gate and the select gate, a control gate is formed with an insulating film sandwiched. The insulating film directly below the floating-gate is formed as a tunnel oxide film which allows FN tunneling of electrons. In an erase operation, electrons are injected into the floating-gate from the silicon substrate, and in a write operation, electrons are extracted from the floating-gate to the drain region. A current required for writing and erasing each cell can be decreased, a low power supply can be used, and the lifetime of the tunnel insulating film can be increased. One disadvantage associated with the device described by Fukumoto is that adjacent memory cells have separate control gates which must be individually selected by a decoding means (not shown).
SUMMARY OF THE INVENTION
It is an object of the present invention to provide a flash semiconductor memory device including a pair of memory cells sharing a common source region, wherein both of the cells may be controlled by a common control gate.
It is another object of the present invention to provide a flash semiconductor memory device including a pair of memory cells sharing a common source region, wherein the amount of space required to fabricate the device on a semiconductor substrate is minimized.
It is a further object of the present invention to provide a process for manufacturing a flash semiconductor memory device including a pair of memory cells sharing a common source region, wherein the manufacturing process is easily controlled.
Briefly, a presently preferred embodiment of the present invention provides a memory device including a first memory cell and a second memory cell both controlled by a common control gate. The device includes: a substrate; a first stack and a second stack, each of the stacks including an insulating layer formed over the substrate, a first conductive layer formed over the insulating layer, and a first dielectric layer formed over the first conductive layer, each of the first and second stacks also including an inner sidewall and an outer sidewall, the inner sidewalls of the first and second stacks opposing each other and being separated by a common area of the substrate, the first conductive layers of the first and second stacks providing select gates of the first and second memory cells respectively, the inner and outer sidewalls of the first and second select gate stacks being coated with a second dielectric layer; first and second spacers are formed adjacent the portions of the second dielectric layer that are coated on the inner sidewalls of the first and second stacks respectively, the first and second spacers being separated by a medial portion of the common source area of the substrate, each
Burns Doane , Swecker, Mathis LLP
Chaudhuri Olik
Mosel Vitelic Inc.
Toledo Fernando
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