Fixture for in-situ noncontact monitoring of wet chemical etchin

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

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156345, 2041292, 216 84, H01L 21306

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active

054512891

ABSTRACT:
A fixture for in-situ chemical etch monitoring of an etching process during etching of at least one wafer contained in a wafer carrier is disclosed. The fixture comprises a set of primary guide members for engaging and guiding a front portion of the wafer carrier. A set of rear guide members engages and guides a rear portion of the wafer carrier. A set of electrode arms is included for receiving a respective electrode and corresponding electrode wire thereon. A mounting plate establishes a prescribed spacing of the set of primary guide members with respect to the set of electrode arms. A means for self-locking the first wafer contained in the wafer boat is connected to the mounting plate and further positioned in a prescribed manner with respect to the set of primary guide members and the set of electrode arms. Lastly, a connecting means connects the mounting plate, the set of primary guide members, and the set of electrode arms to the set of rear guide members, whereby insertion of the wafer boat into the fixture establishes a prescribed distance between the set of electrode arms and the first wafer, and further wherein the first wafer is passively fixed by the self-locking means.

REFERENCES:
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patent: 5081421 (1992-01-01), Miller et al.
Goubau, W. M., "Capacitive Etch Rate Monitor for Dielectric Etching", IBM Technical Disc. Bulletin vol. 31, No. 1, Jun. 1988, 448-449.
Liu et al., "Resistance/Capacitance Methods for Determining Oxide Etch End Point", IBM Technical Disc. Bulletin vol. 16, No. 8, Jan. 1974, 2706-2707.
Hoekstra, J. P., "Establishing End Point During Delineation Process", IBM Technical Disc. Bulletin vol. 16, No. 6, Nov. 1973, 1717-1720.
Bassous et al., "An In-Situ Etch Rate Monitor Controller", IBM Technical Disc. Bulletin vol. 20, No. 3, Aug. 1977, 1232-1234.

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