Five transistor CMOS pixel

Details Five transistor CMOS pixel Five transistor CMOS pixel

2005-01-25

2005-01-25

Wille, Douglas (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S292000, C250S208100, C348S294000, C348S308000

Reexamination Certificate

active

06847070

ABSTRACT:
A method of sensing radiation in a pixel includes applying a transfer clock signal, applying a pixel reset clock signal, and applying a pixel reset voltage. The applying a transfer clock signal applies the transfer clock signal to a gate electrode of a transfer gate transistor. The applying a pixel reset clock signal applies the pixel reset clock signal to a gate electrode of the pixel reset transistor. The applying a pixel reset voltage applies the pixel reset voltage to a drain of the pixel reset transistor. The method further includes switching the transfer clock signal to a high state, switching the pixel reset clock signal to a high state, switching the pixel reset voltage to a low state, switching the pixel reset voltage to a high state, and switching the pixel reset clock signal to a low state at a beginning of an integration cycle.

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