Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-07-26
2011-07-26
Warren, Matthew E (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S343000, C257S401000, C257SE29112, C257SE29119, C257SE29130, C257SE29136, C438S259000
Reexamination Certificate
active
07986002
ABSTRACT:
A semiconductor device includes: a semiconductor substrate in which a trench is formed; a source region and a drain region each of which is buried in the trench and contains an impurity of the same conductive type; a semiconductor FIN buried in the trench and provided between the source and drain regions; a gate insulating film provided on a side surface of the semiconductor FIN as well as the upper surface of the semiconductor FIN; and a gate electrode formed on the gate insulating film.
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Japanese Notice of Reasons for Rejection, with English translation thereof, issued in Japanese Patent Application No. 2006-507677, mailed on Jan. 18, 2011.
Iwanaga Junko
Kanzawa Yoshihiko
Kawashima Takahiro
Saitoh Tohru
Sorada Haruyuki
Lin John
McDermott Will & Emery LLP
Panasonic Corporation
Warren Matthew E
LandOfFree
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