Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-08-30
2010-06-08
Purvis, Sue (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S402000, C257SE29135, C438S283000
Reexamination Certificate
active
07732874
ABSTRACT:
A semiconductor structure includes a first finFET and a second finFET. The first finFET and the second finFET may comprise an n-finFET and a p-finFET to provide a CMOS finFET structure. Within the semiconductor structure, at least one of: (1) a first gate dielectric within the first finFET and a second gate dielectric within the second finFET comprise different gate dielectric materials; and/or (2) a first gate electrode within the first finFET and a second gate electrode within the second finFET comprise different gate electrode materials.
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Doris Bruce B.
Zhang Ying
Zhu Huilong
International Business Machines - Corporation
Purvis Sue
Sandvik Benjamin P
Schnurmann H. Daniel
Scully , Scott, Murphy & Presser, P.C.
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