FinFET structure using differing gate dielectric materials...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S402000, C257SE29135, C438S283000

Reexamination Certificate

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07732874

ABSTRACT:
A semiconductor structure includes a first finFET and a second finFET. The first finFET and the second finFET may comprise an n-finFET and a p-finFET to provide a CMOS finFET structure. Within the semiconductor structure, at least one of: (1) a first gate dielectric within the first finFET and a second gate dielectric within the second finFET comprise different gate dielectric materials; and/or (2) a first gate electrode within the first finFET and a second gate electrode within the second finFET comprise different gate electrode materials.

REFERENCES:
patent: 6653698 (2003-11-01), Lee et al.
patent: 6794234 (2004-09-01), Polishchuk et al.
patent: 6924561 (2005-08-01), Hill et al.
patent: 7224029 (2007-05-01), Anderson et al.
patent: 7230287 (2007-06-01), Anderson et al.
patent: 7250658 (2007-07-01), Doris et al.
patent: 2005/0148137 (2005-07-01), Brask et al.
patent: 2006/0044915 (2006-03-01), Park et al.

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