FinFET structure and method to make the same

Details FinFET structure and method to make the same FinFET structure and method to make the same

2007-12-04

2007-12-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S289000, C257S327000, C257SE29022, C257SE29105

Reexamination Certificate

active

10778953

ABSTRACT:
A multiple-gate FET structure includes a semiconductor substrate. A gate region is formed on the semiconductor substrate. The gate region comprises a gate portion and a channel portion. The gate portion has at least two opposite vertical surfaces adjacent to the channel portion. A source region abuts the gate region at one end, and a drain diffusion region abuts the gate region at the other end.

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