Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-07-11
2010-06-15
Bryant, Kiesha R (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257SE27098, C438S286000
Reexamination Certificate
active
07737501
ABSTRACT:
A FinFET SRAM transistor device includes transistors formed on fins with each transistor including a semiconductor channel region within a fin plus a source region and a drain region extending within the fin from opposite sides of the channel region with fin sidewalls having a gate dielectric formed thereon. Bilateral transistor gates extend from the gate dielectric. An asymmetrically doped FinFET transistor has source/drain regions doped with a first dopant type, but the asymmetrically doped FinFET transistor include at least one of the bilateral transistor gate electrode regions on one side of at least one of the fins counterdoped with respect to the first dopant type. The finFET transistors are connected in a six transistor SRAM circuit including two PFET pull-up transistors, two NFET pull down transistors and two NFET passgate transistors.
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Yang Haining S.
Zhu Huilong
Bryant Kiesha R
International Business Machines - Corporation
Jones Graham S.
Schnurmann H. Daniel
Tornow Mark W
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