FinFET SRAM cell using inverted FinFET thin film transistors

Details FinFET SRAM cell using inverted FinFET thin film transistors FinFET SRAM cell using inverted FinFET thin film transistors

2008-05-27

2008-05-27

Schillinger, Laura M (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000

Reexamination Certificate

active

10539335

ABSTRACT:
An integrated circuit, such as a SRAM cell (130), including an inverted FinFET transistor (P2) and a FinFET transistor (N3). The inverted FinFET transistor includes a first gate region (108) formed by semiconductor structure (100) on a substrate, a first body region comprised of a semiconductor layer (104), having a first channel region (112) disposed on the first gate region and a source (110) and drain (114) formed on either side of the first channel region. The FinFET transistor (N3) is coupled to the inverted FinFET transistor, and includes a second body region formed by the semiconductor structure (102), having a second channel region (118), and a source (116) and drain (120) formed on either side of the second channel region, and a second gate region (122) comprised of the semiconductor layer, disposed on the second channel region.

REFERENCES:
patent: 6300182 (2001-10-01), Yu
patent: 6413802 (2002-07-01), Hu et al.
patent: 6475890 (2002-11-01), Yu
patent: 6525403 (2003-02-01), Inaba et al.
patent: 7221032 (2007-05-01), Kondo
patent: 2005/0156202 (2005-07-01), Rhee et al.
patent: 2006/0011977 (2006-01-01), Kondo
patent: 2006/0068531 (2006-03-01), Breitwisch et al.
patent: 2007/0047357 (2007-03-01), Choi et al.

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