Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-02-15
2005-02-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257S618000
Reexamination Certificate
active
06855582
ABSTRACT:
A method of forming a gate electrode for a fin field effect transistor (FinFET) is provided. The method includes forming a fin on a substrate and forming an oxide layer over the fin. The method further includes forming a trench in the oxide layer, the trench crossing over the fin, and filling the trench with a material to form a gate electrode.
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Dakshina-Murthy Srikanteswara
Tabery Cyrus E.
Advanced Micro Devices , Inc.
Harrity & Snyder LLP
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