Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-05-24
2011-05-24
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C216S002000, C216S046000, C257SE21038, C257SE21235, C257SE21626, C257SE21640, C257SE21218, C257SE23133, C257SE29131, C257SE29152, C438S184000, C438S230000, C438S265000, C438S303000, C438S595000, C438S596000, C438S698000, C438S712000
Reexamination Certificate
active
07947589
ABSTRACT:
A semiconductor process and apparatus provide a FinFET device by forming a second single crystal semiconductor layer (19) that is isolated from an underlying first single crystal semiconductor layer (17) by a buried insulator layer (18); patterning and etching the second single crystal semiconductor layer (19) to form a single crystal mandrel (42) having vertical sidewalls; thermally oxidizing the vertical sidewalls of the single crystal mandrel to grow oxide spacers (52) having a substantially uniform thickness; selectively removing any remaining portion of the single crystal mandrel (42) while substantially retaining the oxide spacers (52); and selectively etching the first single crystal semiconductor layer (17) using the oxide spacers (52) to form one or more FinFET channel regions (92).
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Khater Marwan H.
Muralidhar Ramachandran
Abdelaziez Yasser A
Cannatti Michael Rocco
Freescale Semiconductor Inc.
Garber Charles D
Hamilton & Terrile LLP
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