FinFET body contact structure

Details FinFET body contact structure FinFET body contact structure

2007-07-10

2007-07-10

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S157000, C438S164000, C257S329000, C257SE29262, C257SE21410

Reexamination Certificate

active

10977768

ABSTRACT:
A FinFET body contact structure and a method for creating the FinFET body contact structure are disclosed. The body contact structure comprises a wide fin portion of a semiconductor fin, the wide fin portion having a polysilicon polygon shape formed on a top surface of the wide fin portion. The polysilicon polygon shape has a center area having no polysilicon. FinFETs are formed on two vertical surfaces of the wide fin portion and gates of the FinFETs are coupled to the polysilicon polygon shape. Top surfaces of the wide fin portion and the polysilicon polygon shape are silicided. Silicide bridging is prevented by sidewall spacers. All convex angles on the polysilicon polygon shape are obtuse enough to prevent creation of bridging vertices. The center area is doped of an opposite type from a source and a drain of an associated FinFET.

REFERENCES:
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 6413802 (2002-07-01), Hu et al.
patent: 7005330 (2006-02-01), Yeo et al.
patent: 2002/0137298 (2002-09-01), Ohguro
patent: 2004/0036121 (2004-02-01), Aoki et al.

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