Finfet-based non-volatile memory device

Details Finfet-based non-volatile memory device Finfet-based non-volatile memory device

2006-09-26

2011-11-22

Jackson, Jr., Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257SE21442

Reexamination Certificate

active

08063427

ABSTRACT:
A non-volatile memory device on a substrate layer (2) comprises source and drain regions (3) and a channel region (4). The source and drain regions (3) and the channel region (4) are arranged in a semiconductor layer (20) on the substrate layer (2). The channel region (4) is fin-shaped and extends longitudinally (X) between the source region and the drain region (3). The channel region (4) comprises two fin portions (4a, 4b) and an intra-fin space (10), the fin portions (4a, 4b) extending in the longitudinal direction (X) and being spaced apart, and the intra-fin space (10) being located in between the fin portions (4a, 4b), and a charge storage area (11, 12; 15, 12) is located in the intra-fin space (10) between the fin portions (4a, 4b).

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