Fine structure and devices employing it

Details Fine structure and devices employing it Fine structure and devices employing it

2006-03-28

2006-03-28

Silverman, Stanley S (Department: 1754)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making named article

C355S018000, C430S322000, C430S323000, C430S324000, C430S394000, C430S316000

Reexamination Certificate

active

07018783

ABSTRACT:
In order to form three or more steps on a substrate with high precision, a first mask is formed to an area on the substrate corresponding with every other step, and also etching is performed on the area of the substrate to which the first mask is not formed, a second mask is formed to an area on the substrate to which the first mask has not been formed, and also etching is performed on the area on the substrate to which the first and the second masks are not formed.

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F.W. Youlton, “Composite Blocking and Pattern Defining Mask,” 14(5)IBM Technical Disclosure Bulletin1480 (1971).

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