Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1998-06-09
2000-02-15
Clark, Sheila V.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 22, H01L 2906, H01L 310328, H01L 310336, H01L 31072
Patent
active
060256044
ABSTRACT:
Dispose a fine metal particle on a semiconductor substrate. By heat-treating this in a vacuum, a constituent element of the semiconductor substrate is dissolved into the fine metal particle to form a solid solution, resulting in further formation of a homogeneous liquid phase (liquid droplet) composed of semiconductor-metal. By annealing this, the constituent element of the semiconductor substrate is precipitated from the semiconductor-metal liquid droplet. Thus, a fine projection composite structure comprising a semiconductor substrate, a semiconductor fine projection epitaxially grown selectively at an arbitrary position on the semiconductor substrate, and a metal layer disposed selectively on the semiconductor fine projection, can be obtained. The metal layer can be removed as demands arise. Such a fine projection composite structure possesses applicability in, for instance, an ultra-high integration semiconductor device or a quantum size device.
REFERENCES:
patent: 5006914 (1991-04-01), Beetz, Jr. et al.
patent: 5757029 (1998-05-01), Narui et al.
patent: 5828076 (1998-10-01), Gossner et al.
Tanaka Shun-ichiro
Wakayama Yutaka
Clark Sheila V.
Japan Science and Technology Corporation
Kabushiki Kaisha Toshiba
LandOfFree
Fine projection structure and fabricating method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fine projection structure and fabricating method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fine projection structure and fabricating method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1907778