Fine pattern forming method and fine pattern device

Details Fine pattern forming method and fine pattern device Fine pattern forming method and fine pattern device

1996-03-18

1997-11-04

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 63, 216 87, 1566431, 20419234, C23F 400, H01L 2100

Patent

active

056835957

ABSTRACT:
A particle beam is irradiated locally to a film of an alloy or compound containing atoms of two or more elements, causing atoms of a specific element in the film to selectively recoil to the outside of the film, such that there is formed, inside of the film, a zone in the form of a pattern in which the rate of the atoms of the specific type is smaller than in other portions of the film. In the fine pattern thus formed, the thickness is substantially equal to that of the film, and other sizes are determined according to the particle beam irradiation zone. For example, when a focused ion beam is used as the particle beam, there can be formed a fine pattern on the 10-nm level with precision of the order of nm. This fine pattern can be a quantum wire, a quantum dot or the like. It is therefore possible to produce, with good reproducibility, a device in which a quantum effect has been utilized.

REFERENCES:
patent: 3536547 (1970-10-01), Schmidt
patent: 4874460 (1989-10-01), Nakagawa et al.
patent: 4983540 (1991-01-01), Yamaguchi et al.
patent: 5178726 (1993-01-01), Yu et al.
patent: 5215960 (1993-06-01), Tanaka et al.
patent: 5376225 (1994-12-01), Wakabayashi et al.

Affiliated with

Also associated with

Rating

Fine pattern forming method and fine pattern device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fine pattern forming method and fine pattern device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fine pattern forming method and fine pattern device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1830373