Fine line patterning method for submicron devices

Details Fine line patterning method for submicron devices Fine line patterning method for submicron devices

1983-09-06

1985-01-29

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156646, 156652, 156656, 1566591, 204192E, 430313, 430318, C23F 102, B44C 122, C03C 1500, C03C 2506

Patent

active

044964196

ABSTRACT:
A technique for fine line patterning for submicron devices is disclosed. A fine line pattern is defined on a positive resist, which is then developed to expose corresponding portions of a mask layer. The pattern is then transferred to the mask layer to produce an oxidation mask which is used to control local surface oxidation of an underlying metal film, such as aluminum. The selectively oxidized aluminum film is then etched, leaving a patterned Al film corresponding to the initial positive pattern, since the etch rate of oxidized Al film is much less than the etch rate of the unoxidized Al film. The patterned film may be the final desired device structure, or may serve as a mask for pattern transfer to an underlying substrate.

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