Fine granularity DRAM refresh

Details Fine granularity DRAM refresh Fine granularity DRAM refresh

2007-05-22

2007-05-22

Nguyen, Tuan T. (Department: 2824)

Static information storage and retrieval

Read/write circuit

Data refresh

C365S236000, C365S239000

Reexamination Certificate

active

11321367

ABSTRACT:
A method, device, and system are included. In one embodiment, the method included issuing a single row refresh command for a first row in a memory starting at a target address, incrementing a row counter, continuing issuing a single row refresh command for each subsequent row in the memory and incrementing the row counter until the number of row counter increments is equal to the number of rows of the memory refreshed as a result of a refresh (REF) command.

REFERENCES:
patent: 4984209 (1991-01-01), Rajaram et al.
patent: 5703823 (1997-12-01), Douse et al.
patent: 6415353 (2002-07-01), Leung
patent: 7042785 (2006-05-01), Kim

Affiliated with

Also associated with

Rating

Fine granularity DRAM refresh does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fine granularity DRAM refresh, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fine granularity DRAM refresh will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3754908